AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain

H.-L. Kao*, H.-C. Chiu, S.-H. Chuang, H. H. Hsu, “AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain, ” Electronic and Photonic Devices and Systems section of the ECS Journal of Solid State Science and Technology, vol. 8, no. 4, 2020, pp. 045017.

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