Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates

X. Liu, H.-Y. Wang, H.-C. Chiu, Y. Chen, D. Li, C.-R. Huang, H.-L. Kao, H.-C. Kuo, S.-W. H. Chen, “Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates, ” Journal of Alloys and Compounds, vol. 814, 2020, pp. 152293. 2020/1/1

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