Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI)

J. Liao, C. M. Tan and G. Spierings. “Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI),” Microelectronics Reliability, vol. 49, pp. 1038-1043, 2009.
https://www.sciencedirect.com/science/article/pii/S0026271409001930

回到頂端