High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique

H.-C. Chiu, L.-I Chou, H.-C. Wang, H.-L. Kao, C.-H. Lin, J.-X. Chen, J.-I. Chiy, C.-T. Chen and K.-J. Kuo, “High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique,” Electronic and Photonic Devices and Systems section of the ECS Journal of Solid State Science and Technology, vol. 7, Issue 10, 2018, pp. Q185-189. 2018/10/1

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