Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

H.-C. Chiu, C.-H. Liu, H.-L. Kao, C.-W. Chiu, H.-C. Wang, J. Ben, W. He, C.-R. Haung, “Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region, ” IEEE Journal of the Electron Devices Society, 2020. 2020/8/1

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