Study of carbon in thermal oxide formed on 4H-SiC by XPS

P. Zhao, E. Rusli, J. H. Xia, C. M. Tan, Y. Liu, C. C. Tin, S. F. Yoon, W. G. Zhu, and J. Ahn. “Study of carbon in thermal oxide formed on 4H-SiC by XPS,” Silicon Carbide and Related Materials 2004, Materials Science Forum, vol. 483-485, pp. 653-656, 2005.

回到頂端