Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/low-K interconnects

C. M. Fu, C. M. Tan, S. H. Wu, and H. B. Yao, “Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/low-K interconnects,” Microelectronics Reliability, vol. 50, pp. 1332-1335, 2010
https://www.sciencedirect.com/science/article/pii/S0026271410004063

回到頂端